| PART |
Description |
Maker |
| HERF1601G HERF1602G HERF1608G HERF1603G HERF1604G |
Rectifier: High Efficient
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers
|
TSC[Taiwan Semiconductor Company, Ltd]
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
| AS8650B-ZQFM-01 AS8650B-ZQFP-01 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| HER601 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER1601G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS1B HS1F |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HERF1008G HERF1003G HERF1006G HERF1007G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER154G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| AUBYD57ZH |
High Efficient Rectifier
|
Zowie Technology Corpor...
|
| HER204 HER201 HER208 HER202 HER203 HER205 HER206 H |
HIGH EFFICIENT RECTIFIER DIODES
|
EIC[EIC discrete Semiconductors]
|
